Dr. Christian Rinaldi (Researcher)

Profile

Department of Physics – Polifab
Politecnico di Milano
via G. Colombo 81, 20133 Milano
Office 0.52
Phone: +39 02 2399 9661
E-mail: christian.rinaldi@polimi.it
Skype: christian.rinaldi
Research OrcID: 0000-0001-6930-211X

I was born in Como (Italy) on July, 31st, 1984. In 2003, I received the Diploma as industrial expert in Computer Science, 100/100 with honours at I.T.I.S. Magistri Cumacini. In 2009, I graduated in Physics Engineering at Politecnico di Milano, with the mark of 110/110 cum laude.
In February 2013, I obtained the Ph.D. in Physics cum laude at Politecnico di Milano (Thesis: “Ge-based Photodiodes for Spin-Optoelectronics”, L-NESS Center – Politecnico di Milano). I have been a visiting PhD student for six months at the Institute of Physics ASCR, v. v. i. (FZU), Academy of Sciences of the Czech Republic, working in the framework of AntiFerromagnetic Semiconductors (mainly on CuMnAs).

Since October 2016, I am a Researcher. My research activity is devoted to the study of magnetic heterostructures and spintronic devices based on semiconductors, antiferromagnets and functional oxides and their combination. During the last two years, I worked on Germanium Telluride to proof the existence of the newly proposed class of FerroElectric Rashba SemiConductors (FERSCs).

I’m expert in the growth of thin films and heterostructures by means of Molecular Beam Epitaxy and Magnetron Sputtering as well as in characterization by means of electron’s spectroscopies and diffraction techniques. I am skilled in the fabrication of devices by optical lithography and ion beam milling and in the advanced electric and magnetic characterization of spintronic devices.

I participated in many international conferences with contributed talks and papers. I received a grant at the International Conference of Magnetism (Corea, 2012) and a prize at the XCVIII National Congress of the Italian Physics Society (2012) as best oral contribution in Matter Physics. Finally, I’ve been invited to SPIE2014 Optics+Photonics (August 2014, San Diego) for a talk on “Ge-base spin-photodiodes” within the Semiconductor Spintronics session. I published 28 papers and my h-index is 9 (Scopus).

Publications

2016

  • [DOI] L. Baldrati, C. Rinaldi, A. Manuzzi, M. Asa, L. Aballe, M. Foerster, N. BiÅ¡kup, M. Varela, M. Cantoni, and R. Bertacco, “Electrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO3,” Advanced Electronic Materials, vol. 2, iss. 7, p. 1600085–n/a, 2016.
    [Bibtex]
    @Article{Baldrati2016,
    Title = {Electrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO3},
    Author = {Baldrati, Lorenzo and Rinaldi, Christian and Manuzzi, Alberto and Asa, Marco and Aballe, Lucia and Foerster, Michael and Biškup, Neven and Varela, Maria and Cantoni, Matteo and Bertacco, Riccardo},
    Journal = {Advanced Electronic Materials},
    Year = {2016},
    Note = {1600085},
    Number = {7},
    Pages = {1600085--n/a},
    Volume = {2},
    __markedentry = {[User:]},
    Abstract = {Electronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic and ferroelectric phase, hold potential for achieving the electric control of the magnetization in spintronic devices. In this paper, a novel artificial multiferroic displaying perpendicular magnetic anisotropy is reported: the CoFeB/BaTiO3 bilayer. At room temperature, the CoFeB magnetic coercive field displays a hysteretic behavior, as a function of the voltage across the BaTiO3 layer, with a 60% variation for complete reversal of the ferroelectric BaTiO3 polarization. This is exploited to achieve the electric switching of the magnetization of individual CoFeB electrodes under a uniform magnetic bias field. Upon the local BaTiO3 polarization reversal, the CoFeB electrode jumps from an initial metastable state into the opposite stable magnetization state, with a characteristic switching time determined by magnetic viscosity. The magnetically assisted bipolar electric switching of the magnetization is demonstrated, via voltage pulses compatible with complementary metal-oxide semiconductor (CMOS) electronics, under uniform bias fields as low as 10 Oe.},
    Doi = {10.1002/aelm.201600085},
    ISSN = {2199-160X},
    Keywords = {artificial multiferroics, magnetic viscosity, magnetoelectric coupling, perpendicular magnetic anisotropy},
    Owner = {User},
    Timestamp = {2016.12.02}
    }
  • [DOI] M. Cantoni and C. Rinaldi, “Light helicity detection in MOS-based spin-photodiodes: An analytical model,” Journal of Applied Physics, vol. 120, iss. 10, p. 104505, 2016.
    [Bibtex]
    @Article{Cantoni2016,
    Title = {Light helicity detection in MOS-based spin-photodiodes: An analytical model},
    Author = {Cantoni, M. and Rinaldi, C.},
    Journal = {Journal of Applied Physics},
    Year = {2016},
    Number = {10},
    Pages = {104505},
    Volume = {120},
    Doi = {10.1063/1.4962204},
    Keywords = {MIS devices},
    Owner = {User},
    Timestamp = {2016.12.02}
    }
  • [DOI] M. Liebmann, C. Rinaldi, D. Di Sante, J. Kellner, C. Pauly, R. N. Wang, J. E. Boschker, A. Giussani, S. Bertoli, M. Cantoni, L. Baldrati, M. Asa, I. Vobornik, G. Panaccione, D. Marchenko, J. Sanchez-Barriga, O. Rader, R. Calarco, S. Picozzi, R. Bertacco, and M. Morgenstern, “Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111),” Adv. Mater., vol. 28, iss. 3, p. 560–565, 2016.
    [Bibtex]
    @Article{Liebmann2016,
    Title = {Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111)},
    Author = {Liebmann, Marcus and Rinaldi, Christian and Di Sante, Domenico and Kellner, Jens and Pauly, Christian and Wang, Rui Ning and Boschker, Jos Emiel and Giussani, Alessandro and Bertoli, Stefano and Cantoni, Matteo and Baldrati, Lorenzo and Asa, Marco and Vobornik, Ivana and Panaccione, Giancarlo and Marchenko, Dmitry and Sanchez-Barriga, Jaime and Rader, Oliver and Calarco, Raffaella and Picozzi, Silvia and Bertacco, Riccardo and Morgenstern, Markus},
    Journal = {Adv. Mater.},
    Year = {2016},
    Month = {1},
    Number = {3},
    Pages = {560--565},
    Volume = {28},
    Doi = {10.1002/adma.201503459},
    ISSN = {1521-4095},
    Keywords = {ferroelectricity, photoelectron spectroscopy, piezoforce microscopy, Rashba effect},
    Owner = {User},
    Timestamp = {2016.03.05},
    Url = {http://dx.doi.org/10.1002/adma.201503459}
    }
  • [DOI] C. Rinaldi, S. Bertoli, M. Asa, L. Baldrati, C. Manzoni, M. Marangoni, G. Cerullo, M. Bianchi, R. Sordan, R. Bertacco, and M Cantoni, “Determination of the spin diffusion length in germanium by spin optical orientation and electrical spin injection,” Journal of Physics D: Applied Physics, vol. 49, iss. 42, p. 425104, 2016.
    [Bibtex]
    @Article{Rinaldi2016a,
    Title = {Determination of the spin diffusion length in germanium by spin optical orientation and electrical spin injection},
    Author = {C Rinaldi and S Bertoli and M Asa and L Baldrati and C Manzoni and M Marangoni and G Cerullo and M Bianchi and R Sordan and R Bertacco and M
    Cantoni},
    Journal = {Journal of Physics D: Applied Physics},
    Year = {2016},
    Number = {42},
    Pages = {425104},
    Volume = {49},
    __markedentry = {[User:6]},
    Abstract = {The measurement of the spin diffusion length and/or lifetime in semiconductors is a key issue for the realisation of spintronic devices, exploiting the spin degree of freedom of carriers for storing and manipulating information. In this paper, we address such parameters in germanium (0 0 1) at room temperature (RT) by three different measurement methods. Exploiting optical spin orientation in the semiconductor and spin filtering across an insulating MgO barrier, the dependence of the resistivity on the spin of photo-excited carriers in Fe/MgO/Ge spin photodiodes (spin-PDs) was electrically detected. A spin diffusion length of 0.9  ±  0.2 µ m was obtained by fitting the photon energy dependence of the spin signal by a mathematical model. Electrical techniques, comprising non-local four-terminal and Hanle measurements performed on CoFeB/MgO/Ge lateral devices, led to spin diffusion lengths of 1.3  ±  0.2 µ m and 1.3  ±  0.08 µ m, respectively. Despite minor differences due to experimental details, the order of magnitude of the spin diffusion length is the same for the three techniques. Although standard electrical methods are the most employed in semiconductor spintronics for spin diffusion length measurements, here we demonstrate optical spin orientation as a viable alternative for the determination of the spin diffusion length in semiconductors allowing for optical spin orientation.},
    Doi = {10.1088/0022-3727/49/42/425104},
    Owner = {User},
    Timestamp = {2016.12.02}
    }
  • [DOI] C. Rinaldi, J. C. Rojas-Sanchez, R. N. Wang, Y. Fu, S. Oyarzun, L. Vila, S. Bertoli, M. Asa, L. Baldrati, M. Cantoni, J. -M. George, R. Calarco, A. Fert, and R. Bertacco, “Evidence for spin to charge conversion in GeTe(111),” APL Mater., vol. 4, iss. 3, 2016.
    [Bibtex]
    @Article{Rinaldi2016,
    Title = {Evidence for spin to charge conversion in GeTe(111)},
    Author = {Rinaldi, C. and Rojas-Sanchez, J. C. and Wang, R. N. and Fu, Y. and Oyarzun, S. and Vila, L. and Bertoli, S. and Asa, M. and Baldrati, L. and Cantoni, M. and George, J.-M. and Calarco, R. and Fert, A. and Bertacco, R.},
    Journal = {APL Mater.},
    Year = {2016},
    Number = {3},
    Volume = {4},
    Doi = {10.1063/1.4941276},
    Eid = {032501},
    Owner = {User},
    Timestamp = {2016.03.05},
    Url = {http://scitation.aip.org/content/aip/journal/aplmater/4/3/10.1063/1.4941276}
    }

2015

  • [DOI] M. Asa, L. Baldrati, C. Rinaldi, S. Bertoli, G. Radaelli, M. Cantoni, and R. Bertacco, “Electric field control of magnetic properties and electron transport in BaTiO 3 -based multiferroic heterostructures,” Journal of Physics: Condensed Matter, vol. 27, iss. 50, p. 504004, 2015.
    [Bibtex]
    @Article{Asa2015,
    Title = {Electric field control of magnetic properties and electron transport in BaTiO 3 -based multiferroic heterostructures},
    Author = {Asa, M. and Baldrati, L. and Rinaldi, C. and Bertoli, S. and Radaelli, G. and Cantoni, M. and Bertacco, R.},
    Journal = {Journal of Physics: Condensed Matter},
    Year = {2015},
    Number = {50},
    Pages = {504004},
    Volume = {27},
    Abstract = {In this paper, we report on a purely electric mechanism for achieving the electric control of the interfacial spin polarization and magnetoresistance in multiferroic tunneling junctions. We investigate micrometric devices based on the Co/Fe/BaTiO 3 /La 0.7 Sr 0.3 MnO 3 heterostructure, where Co/Fe and La 0.7 Sr 0.3 MnO 3 are the magnetic electrodes and BaTiO 3 acts both as a ferroelectric element and tunneling barrier. We show that, at 20 K, devices with a 2 nm thick BaTiO 3 barrier present both tunneling electroresistance (TER = 12   ±   0.1%) and tunneling magnetoresistance (TMR). The latter depends on the direction of the BaTiO 3 polarization, displaying a sizable change of the TMR from  −0.32   ±   0.05% for the polarization pointing towards Fe, to  −0.12   ±   0.05% for the opposite direction. This is consistent with the on-off switching of the Fe magnetization at the Fe/BaTiO 3 interface, driven by the BaTiO 3 polarization, we have previously demonstrated in x-ray magnetic circular dichroism experiments.},
    Doi = {10.1088/0953-8984/27/50/504004},
    Owner = {User},
    Timestamp = {2016.03.05},
    Url = {http://stacks.iop.org/0953-8984/27/i=50/a=504004}
    }
  • [DOI] R. Bertacco, G. Radaelli, D. Petti, E. Plekhanov, I. Fina, M. Asa, L. Baldrati, C. Rinaldi, M. Cantoni, P. Torelli, D. Gutierrez, G. Panaccione, M. Varela, S. Picozzi, and J. Fontcuberta, “Switching magnetic order at an Fe/BaTiO3 interface on and off: Impact on hybrid magnetic-ferroelectric tunnel junctions.” 2015.
    [Bibtex]
    @Conference{Bertacco2015,
    Title = {Switching magnetic order at an Fe/BaTiO3 interface on and off: Impact on hybrid magnetic-ferroelectric tunnel junctions},
    Author = {Bertacco, R. and Radaelli, G. and Petti, D. and Plekhanov, E. and Fina, I. and Asa, M. and Baldrati, L. and Rinaldi, C. and Cantoni, M. and Torelli, P. and Gutierrez, D. and Panaccione, G. and Varela, M. and Picozzi, S. and Fontcuberta, J.},
    Year = {2015},
    Note = {cited By 0},
    Art_number = {7156521},
    Document_type = {Conference Paper},
    Doi = {10.1109/INTMAG.2015.7156521},
    Journal = {2015 IEEE International Magnetics Conference, INTERMAG 2015},
    Owner = {User},
    Source = {Scopus},
    Timestamp = {2015.12.09},
    Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-84942474971&partnerID=40&md5=14095e35e94206fe6c183cdb7f2e38be}
    }

2014

  • [DOI] F. Djeghloul, F. Ibrahim, M. Cantoni, M. Bowen, L. Joly, S. Boukari, P. Ohresser, F. Bertran, P. Le Févre, P. Thakur, F. Scheurer, T. Miyamachi, R. Mattana, P. Seneor, A. Jaafar, C. Rinaldi, S. Javaid, J. Arabski, J. -P. Kappler, W. Wulfhekel, N. B. Brookes, R. Bertacco, A. Taleb-Ibrahimi, M. Alouani, E. Beaurepaire, and W. Weber, “Direct observation of a highly spin-polarized organic spinterface at room temperature,” in Proc. SPIE 9167, Spintronics VII, 2014, p. 916713–916713-6.
    [Bibtex]
    @InProceedings{Djeghloul2014,
    Title = {Direct observation of a highly spin-polarized organic spinterface at room temperature},
    Author = {Djeghloul, F. and Ibrahim, F. and Cantoni, M. and Bowen, M. and Joly, L. and Boukari, S. and Ohresser, P. and Bertran, F. and Le Févre, P. and Thakur, P. and Scheurer, F. and Miyamachi, T. and Mattana, R. and Seneor, P. and Jaafar, A. and Rinaldi, C. and Javaid, S. and Arabski, J. and Kappler, J.-P. and Wulfhekel, W. and Brookes, N. B. and Bertacco, R. and Taleb-Ibrahimi, A. and Alouani, M. and Beaurepaire, E. and Weber, W.},
    Booktitle = {Proc. SPIE 9167, Spintronics VII},
    Year = {2014},
    Pages = {916713--916713-6},
    Volume = {9167},
    __markedentry = {[User:1]},
    Abstract = {Toward the design of large-scale electronic circuits that are entirely spintronics-driven, organic semiconductors have been identified as a promising medium to transport information using the electron spin. This requires a ferromagnetic metal-organic interface that is highly spin-polarized at and beyond room temperature, but this key building block is still lacking. We show how the interface between Co and phthalocyanine molecules constitutes a promising candidate. In fact, spin-polarized direct and inverse photoemission experiments reveal a high degree of spin polarization at room temperature at this interface.},
    Comment = {10.1117/12.2060367},
    Doi = {10.1117/12.2060367},
    File = {:2014\\[ProcSPIE9167_Djeghloul] Direct observation of a highly spin-polarized organic spinterface at room temperature.pdf:PDF},
    Journal = {SPIE 9167, Spintronics VII},
    Owner = {christian},
    Timestamp = {2014.09.19},
    Url = {http://dx.doi.org/10.1117/12.2060367}
    }
  • [DOI] G. Radaelli, D. Petti, M. Cantoni, C. Rinaldi, and R. Bertacco, “Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited),” Journal of Applied Physics, vol. 115, iss. 17, 2014.
    [Bibtex]
    @Article{Radaelli2014a,
    Title = {Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)},
    Author = {Radaelli, G. and Petti, D. and Cantoni, M. and Rinaldi, C. and Bertacco, R.},
    Journal = {Journal of Applied Physics},
    Year = {2014},
    Number = {17},
    Volume = {115},
    Doi = {10.1063/1.4870915},
    Eid = {172604},
    File = {:2014\\[JAppPhys_Radaelli] Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe-BaTiO3 interface (invited).pdf:PDF},
    Owner = {christian},
    Timestamp = {2014.04.10},
    Url = {http://scitation.aip.org/content/aip/journal/jap/115/17/10.1063/1.4870915}
    }
  • [DOI] G. Radaelli, D. Petti, E. Plekhanov, I. Fina, P. Torelli, B. R. Salles, M. Cantoni, C. Rinaldi, D. Gutiérrez, G. Panaccione, M. Varela, S. Picozzi, J. Fontcuberta, and R. Bertacco, “Electric control of magnetism at the Fe/BaTiO3 interface,” Nat. Commun., vol. 5, 2014.
    [Bibtex]
    @Article{Radaelli2014,
    Title = {Electric control of magnetism at the Fe/BaTiO3 interface},
    Author = {Radaelli, G. and Petti, D. and Plekhanov, E. and Fina, I. and Torelli, P. and Salles, B. R. and Cantoni, M. and Rinaldi, C. and Gutiérrez, D. and Panaccione, G. and Varela, M. and Picozzi, S. and Fontcuberta, J. and Bertacco, R.},
    Journal = {Nat. Commun.},
    Year = {2014},
    Month = mar,
    Volume = {5},
    __markedentry = {[User:1]},
    Abstract = {Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO3 system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO3 dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high-resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnetoelectric coupling in the Fe/BaTiO3 system. At this interface, an ultrathin oxidized iron layer exists, whose magnetization can be electrically and reversibly switched on and off at room temperature by reversing the BaTiO3 polarization. The suppression/recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BaTiO3 produces on the exchange coupling constants in the interfacial-oxidized Fe layer. The observed giant magnetoelectric response holds potential for optimizing interfacial magnetoelectric coupling in view of efficient, low-power spintronic devices.},
    Comment = {Supplementary information available for this article at http://www.nature.com/ncomms/2014/140303/ncomms4404/suppinfo/ncomms4404_S1.html},
    Doi = {10.1038/ncomms4404},
    File = {:2014\\[JAppPhys_Radaelli] Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe-BaTiO3 interface (invited).pdf:PDF},
    Owner = {christian},
    Publisher = {Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
    Timestamp = {2014.03.04},
    Url = {http://dx.doi.org/10.1038/ncomms4404}
    }
  • [DOI] C. Rinaldi, S. Bertoli, M. Cantoni, C. Manzoni, M. Marangoni, G. Cerullo, M. Bianchi, R. Sordan, and R. Bertacco, “Determination of spin diffusion length in Germanium by optical and electrical spin injection,” in Proc. SPIE 9167, Spintronics VII, 2014, p. 916709–916709-12.
    [Bibtex]
    @InProceedings{Rinaldi2014,
    Title = {Determination of spin diffusion length in Germanium by optical and electrical spin injection},
    Author = {Rinaldi, Christian and Bertoli, Stefano and Cantoni, Matteo and Manzoni, Cristian and Marangoni, Marco and Cerullo, Giulio and Bianchi, Massimiliano and Sordan, Roman and Bertacco, Riccardo},
    Booktitle = {Proc. SPIE 9167, Spintronics VII},
    Year = {2014},
    Pages = {916709--916709-12},
    Volume = {9167},
    __markedentry = {[User:1]},
    Abstract = {We report on the measurements of spin diffusion length and lifetime in Germanium with both magneto-electro-optical and magneto-electrical techniques. Magneto-electro-optical measurements were made by optically inject in Fe/MgO/Ge spin-photodiodes a spin polarized population around the Γ point of the Brillouin zone of Ge at different photon energies. The spin diffusion length is obtained by fitting by a mathematical model the photon energy dependence of the spin signal, due to switching of the light polarization from left to right, leading to a spin diffusion length of 0.9±0.2 μm at room temperature. Non-local four-terminals and Hanle measurements performed on Fe/MgO/Ge lateral devices, at room temperature, instead lead to 1.2±0.2 μm. The compatibility of these values among the different measurement methods validates the use all of all of them to determine the spin diffusion length in semiconductors. While electrical methods are well known in semiconductor spintronics, in this work we demonstrate that the optical pumping versus photon energy is an alternative and reliable method for the determination of the spin diffusion length whereas the band structure of the semiconductor allows for a non-negligible optical spin orientation.},
    Comment = {10.1117/12.2061591},
    Doi = {10.1117/12.2061591},
    File = {:2014\\[ProcSPIE9167_Rinaldi] Determination of spin diffusion length in Germanium by optical and electrical spin injection.pdf:PDF},
    Journal = {SPIE 9167, Spintronics VII},
    Owner = {christian},
    Timestamp = {2014.09.19},
    Url = {http://dx.doi.org/10.1117/12.2061591}
    }
  • [DOI] C. Rinaldi, M. Cantoni, M. Marangoni, C. Manzoni, G. Cerullo, and R. Bertacco, “Wide-range optical spin orientation in Ge from near-infrared to visible light,” Phys. Rev. B, vol. 90, iss. 16, p. 161304, 2014.
    [Bibtex]
    @Article{Rinaldi2014a,
    Title = {Wide-range optical spin orientation in Ge from near-infrared to visible light},
    Author = {Rinaldi, C. and Cantoni, M. and Marangoni, M. and Manzoni, C. and Cerullo, G. and Bertacco, R.},
    Journal = {Phys. Rev. B},
    Year = {2014},
    Month = oct,
    Number = {16},
    Pages = {161304},
    Volume = {90},
    __markedentry = {[User:1]},
    Doi = {10.1103/PhysRevB.90.161304},
    Owner = {christian},
    Publisher = {American Physical Society},
    Refid = {10.1103/PhysRevB.90.161304},
    Timestamp = {2014.10.22},
    Url = {http://link.aps.org/doi/10.1103/PhysRevB.90.161304}
    }
  • [DOI] M. Savoini, C. Piovera, C. Rinaldi, E. Albisetti, D. Petti, A. R. Khorsand, L. Duò, C. Dallera, M. Cantoni, R. Bertacco, M. Finazzi, E. Carpene, A. V. Kimel, A. Kirilyuk, and T. Rasing, “Bias-controlled ultrafast demagnetization in magnetic tunnel junctions,” Phys. Rev. B, vol. 89, p. 140402, 2014.
    [Bibtex]
    @Article{Savoini2014,
    Title = {Bias-controlled ultrafast demagnetization in magnetic tunnel junctions},
    Author = {Savoini, M. and Piovera, C. and Rinaldi, C. and Albisetti, E. and Petti, D. and Khorsand, A. R. and Du\`o, L. and Dallera, C. and Cantoni, M. and Bertacco, R. and Finazzi, M. and Carpene, E. and Kimel, A. V. and Kirilyuk, A. and Rasing, Th.},
    Journal = {Phys. Rev. B},
    Year = {2014},
    Month = {Apr},
    Pages = {140402},
    Volume = {89},
    __markedentry = {[User:1]},
    Doi = {10.1103/PhysRevB.89.140402},
    File = {:2014\\[PhysRevB_Savoini] Bias-controlled ultrafast demagnetization in magnetic tunnel junctions.pdf:PDF},
    Issue = {14},
    Numpages = {5},
    Owner = {christian},
    Publisher = {American Physical Society},
    Timestamp = {2014.04.04},
    Url = {http://link.aps.org/doi/10.1103/PhysRevB.89.140402}
    }

2013

  • [DOI] F. Djeghloul, F. Ibrahim, M. Cantoni, M. Bowen, L. Joly, S. Boukari, P. Ohresser, F. Bertran, P. Le Fèvre, P. Thakur, F. Scheurer, T. Miyamachi, R. Mattana, P. Seneor, A. Jaafar, C. Rinaldi, S. Javaid, J. Arabski, J. P. Kappler, W. Wulfhekel, N. B. Brookes, R. Bertacco, A. Taleb-Ibrahimi, M. Alouani, E. Beaurepaire, and W. Weber, “Direct observation of a highly spin-polarized organic spinterface at room temperature,” Sci. Rep., vol. 3, 2013.
    [Bibtex]
    @Article{Djeghloul2013,
    Title = {Direct observation of a highly spin-polarized organic spinterface at room temperature},
    Author = {Djeghloul, F. and Ibrahim, F. and Cantoni, M. and Bowen, M. and Joly, L. and Boukari, S. and Ohresser, P. and Bertran, F. and Le Fèvre, P. and Thakur, P. and Scheurer, F. and Miyamachi, T. and Mattana, R. and Seneor, P. and Jaafar, A. and Rinaldi, C. and Javaid, S. and Arabski, J. and Kappler, J. P and Wulfhekel, W. and Brookes, N. B. and Bertacco, R. and Taleb-Ibrahimi, A. and Alouani, M. and Beaurepaire, E. and Weber, W.},
    Journal = {Sci. Rep.},
    Year = {2013},
    Month = feb,
    Volume = {3},
    __markedentry = {[User:1]},
    Comment = {10.1038/srep01272},
    Doi = {10.1038/srep01272},
    File = {:.\\MnPc\\[SciRep_Djeghloul] Direct observation of a highly spin-polarized organic spinterface at room temperature.pdf:PDF},
    Owner = {christian},
    Publisher = {Macmillan Publishers Limited. All rights reserved},
    Timestamp = {2013.04.26},
    Url = {http://dx.doi.org/10.1038/srep01272}
    }
  • C. Rinaldi, “Growth and characterization of epitaxial ultrathin-Fe on BaTiO3 films,” in IL NUOVO CIMENTO, 2013, pp. 71-79.
    [Bibtex]
    @InProceedings{Rinaldi2013,
    Title = {Growth and characterization of epitaxial ultrathin-Fe on BaTiO3 films},
    Author = {C. Rinaldi},
    Booktitle = {IL NUOVO CIMENTO},
    Year = {2013},
    Number = {4},
    Pages = {71-79},
    Volume = {36C},
    __markedentry = {[User:1]},
    File = {:2014\\[NuovoCimentoC_Rinaldi] Growth and characterization of epitaxial ultrathin-Fe on BaTiO3 films.pdf:PDF},
    Journal = {Nuovo Cimento C},
    Owner = {christian},
    Timestamp = {2014.03.10}
    }
  • [DOI] C. Rinaldi, M. Cantoni, and R. Bertacco, “Optical spin orientation and depolarization in Ge,” ArXiv e-prints, 2013.
    [Bibtex]
    @Article{Rinaldi2013a,
    Title = {{Optical spin orientation and depolarization in Ge}},
    Author = {Rinaldi, C. and Cantoni, M. and Bertacco, R.},
    Journal = {ArXiv e-prints},
    Year = {2013},
    Month = feb,
    __markedentry = {[User:2]},
    Adsnote = {Provided by the SAO/NASA Astrophysics Data System},
    Adsurl = {http://adsabs.harvard.edu/abs/2013arXiv1302.4675R},
    Archiveprefix = {arXiv},
    Doi = {10.1393/ncc/i2013-11542-2},
    Eprint = {1302.4675},
    Keywords = {Condensed Matter - Mesoscale and Nanoscale Physics},
    Owner = {christian},
    Primaryclass = {cond-mat.mes-hall},
    Timestamp = {2013.11.08},
    Url = {http://arxiv.org/abs/1302.4675}
    }
  • [DOI] P. Wadley, A. Crespi, J. Gazquez, M. A. Roldan, P. Garcia, V. Novak, R. Campion, T. Jungwirth, C. Rinaldi, X. Marti, V. Holy, C. Frontera, and J. Rius, “Obtaining the structure factors for an epitaxial film using Cu X-ray radiation,” Journal of Applied Crystallography, vol. 46, iss. 6, 2013.
    [Bibtex]
    @Article{Wadley2013a,
    Title = {Obtaining the structure factors for an epitaxial film using Cu X-ray radiation},
    Author = {Wadley, P. and Crespi, A. and Gazquez, J. and Roldan, M.A.. and Garcia, P. and Novak, V. and Campion, R. and Jungwirth, T. and Rinaldi, C. and Marti, X. and Holy, V. and Frontera, C. and Rius, J.},
    Journal = {Journal of Applied Crystallography},
    Year = {2013},
    Month = {Dec},
    Number = {6},
    Volume = {46},
    __markedentry = {[User:1]},
    Doi = {10.1107/S002188981302414X},
    File = {:.\\2013\\[JApplCrystallography_Wadley] Solving and refining novel thin film phases using Cu X-ray radiation the epitaxy-induced CuMnAs tetragonal phase.pdf:PDF},
    Owner = {christian},
    Timestamp = {2013.10.20},
    Url = {http://dx.doi.org/10.1107/S002188981302414X}
    }
  • P. Wadley, A. Crespi, J. Gazquez, M. A. Roldan, P. Garcia, V. Novak, R. Campion, T. Jungwirth, C. Rinaldi, X. Marti, V. Holy, C. Frontera, and J. Rius, “Solving and refining novel thin film phases using Cu X-ray radiation: the epitaxy-induced CuMnAs tetragonal phase,” ArXiv e-prints, 2013.
    [Bibtex]
    @Article{Wadley2013b,
    Title = {{Solving and refining novel thin film phases using Cu X-ray radiation: the epitaxy-induced CuMnAs tetragonal phase}},
    Author = {Wadley, P. and Crespi, A. and Gazquez, J. and Roldan, M.A. and Garcia, P. and Novak, V. and Campion, R. and Jungwirth, T. and Rinaldi, C. and Marti, X. and Holy, V. and Frontera, C. and Rius, J.},
    Journal = {ArXiv e-prints},
    Year = {2013},
    Month = jan,
    __markedentry = {[User:2]},
    Adsnote = {Provided by the SAO/NASA Astrophysics Data System},
    Adsurl = {http://adsabs.harvard.edu/abs/2013arXiv1301.5227W},
    Archiveprefix = {arXiv},
    Eprint = {1301.5227},
    Keywords = {Condensed Matter - Materials Science, Physics - Instrumentation and Detectors},
    Owner = {christian},
    Primaryclass = {cond-mat.mtrl-sci},
    Timestamp = {2013.10.20},
    Url = {http://arxiv.org/abs/1301.5227}
    }
  • [DOI] P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Železný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Mašek, R. Bertacco, V. Holý, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, and T. Jungwirth, “Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs,” Nat Commun, vol. 4, p. 1–6, 2013.
    [Bibtex]
    @Article{Wadley2013,
    Title = {Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs},
    Author = {Wadley, P. and Novák, V. and Campion, R.P. and Rinaldi, C. and Martí, X. and Reichlová, H. and Železný, J. and Gazquez, J. and Roldan, M.A. and Varela, M. and Khalyavin, D. and Langridge, S. and Kriegner, D. and Máca, F. and Mašek, J. and Bertacco, R. and Holý, V. and Rushforth, A.W. and Edmonds, K.W. and Gallagher, B.L. and Foxon, C.T. and Wunderlich, J. and Jungwirth, T.},
    Journal = {Nat Commun},
    Year = {2013},
    Month = aug,
    Pages = {1--6},
    Volume = {4},
    __markedentry = {[User:1]},
    Comment = {Supplementary information available for this article at http://www.nature.com/ncomms/2013/130820/ncomms3322/suppinfo/ncomms3322_S1.html},
    Doi = {10.1038/ncomms3322},
    File = {:.\\2013\\[NatComm_Wadley] Tetragonal phase of epitaxial room-temperature antiferromagnetic CuMnAs.pdf:PDF},
    Owner = {christian},
    Publisher = {Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
    Timestamp = {2013.10.20},
    Url = {http://dx.doi.org/10.1038/ncomms3322}
    }

2012

  • [DOI] C. Rinaldi, M. Cantoni, D. Petti, and R. Bertacco, “Epitaxial Fe/MgO/Ge spin-photodiodes for integrated detection of light helicity at room temperature,” J. Appl. Phys., vol. 111, iss. 7, p. 07C312–3, 2012.
    [Bibtex]
    @Article{Rinaldi2012a,
    Title = {Epitaxial Fe/MgO/Ge spin-photodiodes for integrated detection of light helicity at room temperature},
    Author = {Rinaldi, C. and Cantoni, M. and Petti, D. and Bertacco, R.},
    Journal = {J. Appl. Phys.},
    Year = {2012},
    Month = apr,
    Number = {7},
    Pages = {07C312--3},
    Volume = {111},
    __markedentry = {[User:1]},
    Doi = {10.1063/1.3676243},
    File = {:[JApplPhys_Rinaldi] Epitaxial Fe-MgO-Ge spin-photodiodes for integrated detection of light helicity at room temperature.pdf:PDF},
    Keywords = {epitaxial layers, germanium, iron, light polarisation, magnesium compounds, magnetic circular dichroism, photoconductivity, photodiodes, photoexcitation},
    Owner = {christian},
    Publisher = {AIP},
    Timestamp = {2012.05.18},
    Url = {http://dx.doi.org/10.1063/1.3676243}
    }
  • [DOI] C. Rinaldi, M. Cantoni, D. Petti, A. Sottocorno, M. Leone, N. M. Caffrey, S. Sanvito, and R. Bertacco, “Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity,” Adv. Mater., vol. 24, p. 3037–3041, 2012.
    [Bibtex]
    @Article{Rinaldi2012,
    Title = {Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity},
    Author = {Rinaldi, Christian and Cantoni, Matteo and Petti, Daniela and Sottocorno, Andrea and Leone, Marco and Caffrey, Nuala M. and Sanvito, Stefano and Bertacco, Riccardo},
    Journal = {Adv. Mater.},
    Year = {2012},
    Pages = {3037–3041},
    Volume = {24},
    __markedentry = {[User:1]},
    Abstract = {Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I0 down to 200 μW. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity.},
    Doi = {10.1002/adma.201104256},
    File = {:[AdvMat_Rinaldi] Ge-based spin-photodiodes for room-temperature integrated detection of photon helicity.pdf:PDF},
    ISSN = {1521-4095},
    Keywords = {spintronics, spin-optoelectronics, magnetism, photonics},
    Owner = {christian},
    Publisher = {WILEY-VCH Verlag},
    Timestamp = {2012.06.12},
    Url = {http://dx.doi.org/10.1002/adma.201104256}
    }
  • [DOI] C. Rinaldi, M. Espahbodi, M. Cantoni, and R. Bertacco, “Spin-photodiodes for SiGe spin-optoelectronics,” in Proc. SPIE 8461, Spintronics V, 2012, p. 84611F–84611F.
    [Bibtex]
    @InProceedings{Rinaldi2012b,
    Title = {Spin-photodiodes for SiGe spin-optoelectronics},
    Author = {Rinaldi, Christian and Espahbodi, Mohammad and Cantoni, Matteo and Bertacco, Riccardo},
    Booktitle = {Proc. SPIE 8461, Spintronics V},
    Year = {2012},
    Editor = {Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi},
    Month = oct,
    Pages = {84611F--84611F},
    Volume = {8461},
    __markedentry = {[User:1]},
    Abstract = {We report on spin-photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures for room temperature integrated detection of light helicity at 1300 nm and 1550 nm wavelengths. The degree of circular polarization of light determines the spin direction of photo-carriers in Ge that are filtered by the Fe/MgO analyzer. Spin-detection experiments are performed by measuring the photocurrent while illuminating the spin-photodiodes with left or right circularly polarized light, under the application of a magnetic field parallel to the light direction which drives the Fe magnetization out of plane. We found that the spin-photodiodes spin filtering asymmetry is reduced by ∼40% in forward bias and by less than 15% in reverse bias, when increasing the photon wavelength from 1300 nm to 1550 nm. This result, apparently counterintuitive because of the larger spin polarization of the photo-carriers generated at 1550 nm with respect to that at 1300 nm, is explained in terms of the different spatial profile of carrier generation inside Ge. The larger penetration depth of light at 1550 nm leads to a smaller polarization of photocarriers when they reach the MgO tunneling barrier, due to the more efficient spin relaxation during transport.},
    Comment = {10.1117/12.956474},
    Doi = {doi: 10.1117/12.956474},
    File = {:C\:\\Users\\christian\\Documents\\Spintronica\\Articoli\\Personali\\[SPIE_Rinaldi] Spin-photodiodes for SiGe spin-optoelectronics.pdf:PDF},
    Journal = {SPIE 8461, Spintronics V},
    Owner = {christian},
    Timestamp = {2012.10.26},
    Url = {http://dx.doi.org/10.1117/12.956474}
    }
  • [DOI] P. Torelli, M. Sperl, R. Ciancio, J. Fujii, C. Rinaldi, M. Cantoni, R. Bertacco, M. Utz, D. Bougeard, M. Soda, E. Carlino, G. Rossi, C. H. Back, and G. Panaccione, “Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As,” Nanotechnology, vol. 23, iss. 46, p. 465202, 2012.
    [Bibtex]
    @Article{Torelli2012a,
    Title = {Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As},
    Author = {Torelli, P and Sperl, M and Ciancio, R and Fujii, J and Rinaldi, C and Cantoni, M and Bertacco, R and Utz, M and Bougeard, D and Soda, M and Carlino, E and Rossi, G and Back, C H and Panaccione, G},
    Journal = {Nanotechnology},
    Year = {2012},
    Number = {46},
    Pages = {465202},
    Volume = {23},
    __markedentry = {[User:1]},
    Abstract = {We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001) ∥ MgO[110](001) ∥ (Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.},
    Doi = {10.1088/0957-4484/23/46/465202},
    File = {:.\\[Nanotechnology_Torelli] Growth of ultrathin epitaxial Fe-MgO spin injector on 001 GaMnAs.pdf:PDF},
    ISSN = {0957-4484},
    Owner = {christian},
    Timestamp = {2012.10.26},
    Url = {http://dx.doi.org/10.1088/0957-4484/23/46/465202}
    }

2011

  • [DOI] S. Brivio, C. Rinaldi, D. Petti, R. Bertacco, and F. Sanchez, “Epitaxial growth of Fe/BaTiO3 heterostructures,” Thin Solid Films, vol. 519, pp. 5804-5807, 2011.
    [Bibtex]
    @Article{Brivio,
    Title = {Epitaxial growth of Fe/BaTiO3 heterostructures},
    Author = {Brivio, S. and Rinaldi, C. and Petti, D. and Bertacco, R. and Sanchez, F.},
    Journal = {Thin Solid Films},
    Year = {2011},
    Pages = {5804-5807},
    Volume = {519},
    __markedentry = {[User:1]},
    Abstract = {The realization of epitaxial heterostructures involving ferroelectric (FE) and ferromagnetic (FM) materials is one of the possible routes towards the realization of devices exploiting sizable magnetoelectric effects. In this paper we demonstrate the epitaxial growth of Fe on BaTiO3(001) as this system represents a prototypical example of interface between well known FE and FM materials with bcc and perovskite structure respectively, both with Curie temperature well above 300 K. Fe grows on BaTiO3 with 45° rotation of its cubic lattice with respect to that of the substrate in order to reduce the lattice mismatch. Negligible interdiffusion of Ba and Ti cations or Fe atoms is found by X-ray photoemission spectroscopy, while a sizable Fe oxidation occurs within an interfacial layer with thicknesses thinner than 3 nm.},
    Doi = {10.1016/j.tsf.2010.12.193},
    File = {:C\:\\Users\\christian\\Documents\\Spintronica\\Articoli\\Personali\\[ThinSolidFilms_Brivio] Epitaxial growth of FeBaTiO3 heterostructures.pdf:PDF},
    ISSN = {0040-6090},
    Owner = {christian},
    Timestamp = {2011.02.11},
    Url = {http://dx.doi.org/10.1016/j.tsf.2010.12.193}
    }
  • [DOI] M. Cantoni, D. Petti, C. Rinaldi, and R. Bertacco, “Epitaxial growth of Fe/MgO/Ge(001) heterostructures,” Microelectronic Engineering, vol. 88, iss. 4, p. 530–533, 2011.
    [Bibtex]
    @Article{Cantoni2011,
    Title = {Epitaxial growth of Fe/MgO/Ge(001) heterostructures},
    Author = {Cantoni, M. and Petti, D. and Rinaldi, C. and Bertacco, R.},
    Journal = {Microelectronic Engineering},
    Year = {2011},
    Month = apr,
    Number = {4},
    Pages = {530--533},
    Volume = {88},
    __markedentry = {[User:1]},
    Abstract = {We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top of a p(2 × 1)-Ge(0 0 1) clean surface. The growth of Fe at room temperature followed by annealing at 473 K gives the best epitaxial structure with optimized crystallinity of each layer compatible with limited chemical interdiffusion. Tunneling devices based on the epitaxial Fe/MgO/Ge heterostructure have been micro-fabricated and tested in order to probe the electrical properties of the MgO barrier. The current-voltage characteristics clearly show that tunneling is the dominant phenomenon, thus indicating that this system is very promising for practical applications in electronics and spintronics.},
    Booktitle = {Post-Si-CMOS electronic devices: the role of Ge and III-V materials},
    Doi = {10.1016/j.mee.2010.09.016},
    File = {:C\:\\Users\\christian\\Documents\\Spintronica\\Articoli\\Personali\\[MicroelEng_Cantoni_2010] Epitaxial growth of Fe-MgO-Ge001 heterostructures.pdf:PDF},
    ISSN = {0167-9317},
    Keywords = {Epitaxy, Germanium, Magnesium oxide, MOS heterostructure},
    Owner = {christian},
    Timestamp = {2011.02.11},
    Url = {http://dx.doi.org/10.1016/j.mee.2010.09.016}
    }
  • [DOI] M. Cantoni, D. Petti, C. Rinaldi, and R. Bertacco, “Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study,” Appl. Phys. Lett., vol. 98, iss. 3, p. 032104–3, 2011.
    [Bibtex]
    @Article{Cantoni2011a,
    Title = {Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study},
    Author = {Cantoni, M. and Petti, D. and Rinaldi, C. and Bertacco, R.},
    Journal = {Appl. Phys. Lett.},
    Year = {2011},
    Month = jan,
    Number = {3},
    Pages = {032104--3},
    Volume = {98},
    __markedentry = {[User:1]},
    Doi = {10.1063/1.3543851},
    File = {:C\:\\Users\\christian\\Documents\\Spintronica\\Articoli\\Personali\\[ApplPhysLett_Cantoni_2011] Bandstructure line-up of epitaxial Fe-MgO-Ge heterostructures a combined XPS and transport study.pdf:PDF},
    Keywords = {band structure, doping, electrical conductivity, elemental semiconductors, Fermi level, germanium, iron, magnesium compounds, MIS structures, Schottky barriers, X-ray photoelectron spectra},
    Owner = {christian},
    Publisher = {AIP},
    Timestamp = {2011.02.11},
    Url = {http://dx.doi.org/10.1063/1.3543851}
    }
  • [DOI] J. Gazquez, M. Varela, D. Petti, M. Cantoni, C. Rinaldi, S. Brivio, and R. Bertacco, “Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures,” Journal of Materials Science, vol. 46, p. 1–5, 2011.
    [Bibtex]
    @Article{Gazquez2011,
    Title = {Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures},
    Author = {Gazquez, Jaume and Varela, Maria and Petti, Daniela and Cantoni, Matteo and Rinaldi, Christian and Brivio, Stefano and Bertacco, Riccardo},
    Journal = {Journal of Materials Science},
    Year = {2011},
    Month = jan,
    Pages = {1--5},
    Volume = {46},
    __markedentry = {[User:1]},
    Abstract = {Aberration correction in the scanning transmission electron microscope combined with electron energy loss spectroscopy allows simultaneous mapping of the structure, the chemistry and even the electronic properties of materials in one single experiment with spatial resolutions of the order of one Ångström. Here the authors will apply these techniques to the characterization of epitaxial Fe/MgO/(001)Ge and interfaces with possible applications for tunneling junctions, and the authors will show that epitaxial MgO films can be grown on a (001)Ge substrates by molecular beam epitaxy and how it is possible to map the chemistry of interfaces with atomic resolution.},
    Doi = {10.1007/s10853-011-5248-7},
    File = {:C\:\\Users\\christian\\Documents\\Spintronica\\Articoli\\Personali\\[Gazquez_JMatSci] Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe-MgO-Ge heterostructures.pdf:PDF},
    ISSN = {0022-2461},
    Owner = {christian},
    Publisher = {Springer Netherlands},
    Refid = {citeulike:8777740},
    Timestamp = {2011.02.11},
    Url = {http://dx.doi.org/10.1007/s10853-011-5248-7}
    }
  • [DOI] D. Petti, M. Cantoni, C. Rinaldi, and R. Bertacco, “Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics,” Journal of Physics: Conference Series, vol. 292, iss. 1, p. 12010, 2011.
    [Bibtex]
    @Article{Petti2011a,
    Title = {Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics},
    Author = {Petti, D and Cantoni, M and Rinaldi, C and Bertacco, R},
    Journal = {Journal of Physics: Conference Series},
    Year = {2011},
    Number = {1},
    Pages = {012010},
    Volume = {292},
    __markedentry = {[User:1]},
    Abstract = {We report on the chemical and electronic properties of epitaxial Fe/MgO/Ge(001) heterostructures probed by X-ray Photoemission Spectroscopy. At variance with the Fe/MgO/Fe system, annealing at 570 K produces a sizable interdiffusion at the upper Fe/MgO interface, while at 470 K this process is inhibited. The XPS analysis of band alignment in heterostructures annealed at 470 K grown onto an intrinsic Ge substrate indicates that the Fermi level is placed at the center of the MgO gap and that the Schottky barrier height is 0.35±0.1 eV, thus indicating a partial depinning of the Fermi level.},
    Doi = {10.1088/1742-6596/292/1/012010},
    File = {:2011-2012\\[TSN2010-Proceedings_Petti] Chemical and electronic properties of Fe-MgO-Ge heterostructures for spin electronics.pdf:PDF;:2011\\[TSN2010-Proceedings_Petti] Chemical and electronic properties of Fe-MgO-Ge heterostructures for spin electronics.pdf:PDF},
    ISSN = {1742-6596},
    Owner = {christian},
    Timestamp = {2012.05.18},
    Url = {http://dx.doi.org/10.1088/1742-6596/292/1/012010}
    }
  • [DOI] D. Petti, M. Cantoni, C. Rinaldi, S. Brivio, R. Bertacco, J. Gazquez, and M. Varela, “Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions,” J. Appl. Phys., vol. 109, iss. 8, p. 084909–7, 2011.
    [Bibtex]
    @Article{Petti2011,
    Title = {Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions},
    Author = {Petti, D. and Cantoni, M. and Rinaldi, C. and Brivio, S. and Bertacco, R. and Gazquez, J. and Varela, M.},
    Journal = {J. Appl. Phys.},
    Year = {2011},
    Month = apr,
    Number = {8},
    Pages = {084909--7},
    Volume = {109},
    __markedentry = {[User:1]},
    Doi = {10.1063/1.3554834},
    File = {:[JAP_Petti] Sharp Fe-MgO-Ge(001) epitaxial heterostructures for tunneling junctions.pdf:PDF},
    Keywords = {annealing, elemental semiconductors, epitaxial layers, germanium, iron, magnesium compounds, molecular beam epitaxial growth, oxidation, transmission electron microscopy},
    Owner = {christian},
    Publisher = {AIP},
    Timestamp = {2012.05.18},
    Url = {http://link.aip.org/link/?JAP/109/084909/1}
    }
  • D. C. M. R.Bertacco M.Cantoni, “Dispositivo rilevatore ottico spintronico.,” , iss. MI2011A000211, 2011.
    [Bibtex]
    @Patent{Brevetto2011,
    Title = {Dispositivo rilevatore ottico spintronico.},
    Nationality = {Italy},
    Number = {MI2011A000211},
    Year = {2011},
    Address = {Politecnico di Milano, Milan},
    Author = {R.Bertacco, M.Cantoni, D.Petti, C.Rinaldi, M.Leone},
    Language = {Italian},
    __markedentry = {[User:2]},
    Owner = {christian},
    Timestamp = {2014.03.02}
    }